| PART |
Description |
Maker |
| S2057 |
Port Bypass Circuit for Fibre Channel and GigaBit Ethernet(用于光纤通道和千兆位以太网的端口旁路电路)
|
Applied Micro Circuits Corp.
|
| HDMP-0421 |
Port Bypass Circuits for Fibre Channel Arbitrated Loop Standard and its Extensions
|
Agilent(Hewlett-Packard)
|
| VSC7122 |
Quad Port Bypass Circuit for 1.0625 Gbit/sec Fibre Channel Arbitrated Loop Disk Arrays
|
Vitesse Semiconductor Corpo...
|
| HFDOM40MRXXX DOM40MR032 |
40Pin Flash Disk Module Min.8MB ~ Max.1GB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.1GB，真正的IDE接口模式3.3 / 5.0V工作
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| W3EG72125S335AJD3 W3EG72125S202JD3 W3EG72125S263AJ |
1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL 1GB 2x64Mx72 ECC的DDR SDRAM的注册瓦锁相
|
Amphenol, Corp.
Toshiba, Corp.
|
| SY58626L10 |
DC-to-6.4Gbps Backplane Transmit Buffer with
|
Micrel Semiconductor
|
| HFBR-53A3VEM HFBR-53A3VFM |
3.3 V 1 x 9 Fiber Optic Transceivers for Fibre Channel for Fibre Channel
1 x 9 3.3V Fiber Optic Transceiver for Fibre Channel/Storage - Flush Shield. Metalized Housing
1 x 9 3.3V Fiber Optic Transceiver for Fibre Channel/Storage - Extended Shield. Metalized Housing
|
http://
|
| KBE00S003M-D411 KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2
From old datasheet system
1Gb NANDx2 256Mb Mobile SDRAMx2
|
SAMSUNG[Samsung semiconductor]
|
| SY56017RMG SY56017RMGTR |
Low Voltage 1.2V/1.8V/2.5V CML 2:1 MUX 6.4Gbps with Equalization
|
Micrel Semiconductor
|
| SY56028XR SY56028XRMG SY56028XRMGTR |
Low Voltage 1.2V/1.8V/2.5V CML 4:1 MUX with 1:2 FANOUT 6.4Gbps with EQUALIZATION
|
Micrel Semiconductor
|
| WV3EG264M64EFSU335D4-MG |
1GB- 2x64Mx64 DDR SDRAM UNBUFFERED, w/PLL 1GB 2x64Mx64 DDR SDRAM的缓冲，瓦特/锁相
|
Supertex, Inc.
|
